IRD3CH53DB6 applications ? ? industrial motor drive ? ? uninterruptible power supply ? ? welding ? ? solar inverter mechanical parameters die size 7.26 x 7.25 anode pad size 5.81 x 5.82 area total / active 52.6 / 37.6 thickness 330 m wafer size 150 mm minimum street width 100 m flat position 0 degree maximum-possible chips per wafer 262 pcs passivation frontside silicon nitride front metal-anode pad al-1%si (3m) backside metal cr /ni /ag die bond electrically conductive epoxy or solder reject ink dot size 0.25mm min (black, center) recommended storage environment store in original container, in dry nitrogen, <6 months at an ambient temperature of 23c mm 2 features benefits low v f high efficiency in a wide range of applications ultra fast-soft recovery performance optimized for igbt anti parallel diode v rrm = 1200v i f (nominal) = 100a t j (max) = 150c v f typ = 2.2v chip type v rrm package type i f(nominal) die size IRD3CH53DB6 1200v 100a 7.26 x 7.25mm 2 wafer ? ultra fast-soft recovery diode a ? c c a cathode anode 1 www.irf.com ? 2014 international rectifier submit datasheet feedback january 16, 2014
? IRD3CH53DB6 2 www.irf.com ? 2014 international rectifier submit datasheet feedback january 16, 2014 maximum ratings ? parameter max. units v rrm reverse voltage 1200 v t j , t stg operating junction and storage temperature -40 to +150 c static characteristics (tested on wafers) . t j =25c ? parameter min. typ. max. units conditions v rrm maximum reverse breakdown voltage 1200 ??? ??? v i rrm = 150a,t j = 25c ? v fm maximum forward voltage ??? ??? 1.6 t j = 25c, i f = 10a, i rm maximum reverse leakage current ??? ??? 20 a t j = 25c, v rrm = 1200v electrical characteristics (not subject to production test) parameter min. typ. max. units t j conditions v f ? forward voltage ? ??? 2.2 2.7 v ? 25c ? i f = 100a , t j = 25c ? ??? 2.3 ??? v ? 150c ? i f = 100a , t j = 150c ? i r ? leakage current ? ??? 2.0 ??? a ? 25c ? v r = 1200v, t j = 25c ? ??? 1.7 ??? ma ? 150c ? v r = 1200v, t j = 150c ? switching characteristics (inductive load-not subject to production test) parameter min. typ. max. units t j conditions ? t rr reverse recovery time ? 270 ? ns 25c ? i f = 100a , di/dt=400a/s, v rr = 600v ? 350 ? 150c ? q rr reverse recovery charge ? 6.0 ? c 25c ? ? 12 ? 150c ? i rr peak reverse recovery current ? 34 ? a 25c ? ? 54 ? 150c ? e rr reverse recovery energy ? 3.3 ? mj 25c ? ? 6.9 ? 150c ? softness (t b /t a ) ? 1.3 ? 25c ? ? 1.1 ? 150c ? s
? IRD3CH53DB6 3 www.irf.com ? 2014 international rectifier submit datasheet feedback january 16, 2014 fig 1. typical forward characteristic fig 3. typical q rr vs. di/dt fig 2. typical t rr vs. di/dt fig 4. typical i rr vs. di/dt 200 400 600 800 1000 di f /dt - (a/s) 0 100 200 300 400 500 600 trr - (ns) i f = 200a i f = 100a i f = 50a v r = 600v t j = 150c ---------- t j = 25c _____ 200 400 600 800 1000 di f /dt - (a/s) 0 5 10 15 20 25 qrr - ( ? c) i f = 200a i f = 100a i f = 50a v r = 600v t j = 150c ---------- t j = 25c _____ 200 400 600 800 1000 di f /dt - (a/s) 0 20 40 60 80 100 120 irr - (a) i f = 200a i f = 100a i f = 50a v r = 600v t j = 150c ---------- t j = 25c _____ 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v f, forward voltage drop (v) 0 50 100 150 200 250 300 350 400 i f , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) -40c 25c 150c
? IRD3CH53DB6 4 www.irf.com ? 2014 international rectifier submit datasheet feedback january 16, 2014 fig 6. reverse recovery waveform fig 5. typical err vs. di/dt t a t b t rr q rr i rrm i rrm 0.5 di(rec)m/d t 0.75 i rrm 4 3 2 1 di /dt f 200 400 600 800 1000 di f /dt - (a/s) 0 2 4 6 8 10 12 14 err - (mj) i f = 200a i f = 100a i f = 50a v r = 600v t j = 150c ---------- t j = 25c _____
? IRD3CH53DB6 5 www.irf.com ? 2014 international rectifier submit datasheet feedback january 16, 2014 die drawing
? IRD3CH53DB6 6 www.irf.com ? 2014 international rectifier submit datasheet feedback january 16, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ additional testing and screening for customers requiring product supplied as known good die (kgd) or requiring specific die level testing, please con- tact your local ir sales. shipping three shipping options are offered. ?? un-sawn wafer ?? die in waffle pack (consult the ir die sales team for availability) ?? die on film (consult the ir die sales team for availability) tape and reel is also available for some products. please consult your local ir sales office or email http://die.irf.com for additional information. please specify your required shipping option when requesting prices and ordering die product. if not specified, un-sawn wafer will be assumed. handling ?? product must be handled only at esd safe workstations . standard esd precautions and safe work environ- ments are as defined in mil-hdbk-263. ?? product must be handled only in a class 10,000 or better-designated clean room environment. ?? singulated die are not to be handled with tweezers. a va cuum wand with a non-metallic esd protected tip should be used. wafer/die storage ?? proper storage conditions are necessary to prevent product contamination and/or degradation after shipment. ?? un-sawn wafers and singulated die can be stored for up to 12 months when in the original sealed packaging at room temperature (45% +/- 15% rh controlled environment). ?? un-sawn wafers and singulated die that have been opened c an be stored when returned to their containers and placed in a nitrogen purged cabinet, at room temper ature (45% +/- 15% rh controlled environment). ?? note: to reduce the risk of contamination or degradati on, it is recommended that product not being used in the assembly process be returned to their original c ontainers and resealed with a vacuum seal process. ?? sawn wafers on a film frame are intended for immediate use and have a limited shelf life. ?? die in surf tape type carrier tape are intended for immedi ate use and have a limited shelf life. this is primarily due to the nature of the adhesive tape used to hold the prod uct in the carrier tape cavity. this product can be stored for up to 30 days. this applies whether or not the material has remained in its original sealed container. further information for further information please contact your loca l ir sales office or email your enquiry to http://die.irf.com
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